参数名
参数值
参数名
参数值
包装/外壳
62 mm
表面安装
NO
终端数量
5
晶体管元件材料
SILICON
ECCN (US)
EAR99
Maximum Collector-Emitter Voltage (V)
1700
Typical Collector Emitter Saturation Voltage (V)
1.95
Maximum Gate Emitter Voltage (V)
±20
Maximum Power Dissipation (mW)
1100000
Maximum Continuous Collector Current (A)
150
Maximum Gate Emitter Leakage Current (uA)
0.1
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Supplier Package
62MM-1
Military
无
Mounting
Screw
Package Height
29
Package Length
106.4
Package Width
61.4
PCB changed
7
Manufacturer Part Number
FF150R17KE4
Manufacturer
Infineon
Maximum Gate Emitter Voltage
20 V
Pd - Power Dissipation
1100 W
Maximum Operating Temperature
+ 150 C
Collector-Emitter Saturation Voltage
1.95 V
Unit Weight
12 oz
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
10
Continuous Collector Current at 25 C
250 A
Mounting Styles
底座安装
Part # Aliases
SP000713524 FF150R17KE4HOSA1
Brand
Infineon Technologies
Tradename
TRENCHSTOP
RoHS
Details
Collector- Emitter Voltage VCEO Max
1700 V
Package Description
FLANGE MOUNT, R-XUFM-X5
Package Style
FLANGE MOUNT
Moisture Sensitivity Levels
1
Package Body Material
UNSPECIFIED
Turn-on Time-Nom (ton)
355 ns
Turn-off Time-Nom (toff)
930 ns
Reflow Temperature-Max (s)
未说明
Operating Temperature-Max
175 °C
Rohs Code
有
Package Shape
RECTANGULAR
Number of Elements
2
Part Life Cycle Code
活跃
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Risk Rank
1.24
Part Package Code
MODULE
包装
Tray
系列
Trenchstop IGBT4 - E4
无铅代码
有
零件状态
活跃
ECCN 代码
EAR99
类型
Dual
子类别
IGBTs
技术
Si
端子位置
UPPER
终端形式
UNSPECIFIED
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
引脚数量
7
JESD-30代码
R-XUFM-X5
资历状况
不合格
配置
Dual
箱体转运
ISOLATED
晶体管应用
电源控制
电路型态
Half-Bridge
极性/通道类型
N-CHANNEL
产品类别
IGBT模块
信道型
N
最大耗散功率(Abs)
1100 W
集电极电流-最大值(IC)
250 A
集电极-发射器电压-最大值
1700 V
栅极-发射极电压-最大值
20 V
VCEsat-最大值
2.3 V
产品
IGBT硅模块
产品类别
IGBT模块
高度(毫米)
30.5 mm
RoHS状态
符合RoHS标准