Infineon Technologies AG FF450R12ME3
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FF450R12ME3
1211-FF450R12ME3
晶体管 - IGBT - 模块
EconoDUAL-3
大陆
立即发货

Trans IGBT Module N-CH 1200V 600A 2100000mW 11-Pin ECONOD-3 Tray
1最小包装量--
FF450R12ME3详情
Infineon Technologies AG FF450R12ME3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
EconoDUAL-3
表面安装
NO
终端数量
11
晶体管元件材料
SILICON
ECCN (US)
EAR99
Maximum Collector-Emitter Voltage (V)
1200
Typical Collector Emitter Saturation Voltage (V)
1.7
Maximum Gate Emitter Voltage (V)
±20
Maximum Power Dissipation (mW)
2100000
Maximum Continuous Collector Current (A)
600
Maximum Gate Emitter Leakage Current (uA)
0.4
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
125
Standard Package Name
ECONOD
Supplier Package
ECONOD-3
Military
无
Mounting
Screw
Package Height
17
Package Length
152
Package Width
62
PCB changed
11
Manufacturer Part Number
FF450R12ME3
Manufacturer
Infineon
Maximum Gate Emitter Voltage
20 V
Pd - Power Dissipation
2.1 kW
Maximum Operating Temperature
+ 125 C
Collector-Emitter Saturation Voltage
1.7 V
Unit Weight
12.169517 oz
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
10
Continuous Collector Current at 25 C
600 A
Mounting Styles
底座安装
Part # Aliases
SP000317626 FF450R12ME3BOSA1
Brand
Infineon Technologies
Tradename
EconoDUAL
RoHS
Details
Collector- Emitter Voltage VCEO Max
1200 V
Package Description
FLANGE MOUNT, R-XUFM-X11
Package Style
FLANGE MOUNT
Package Body Material
UNSPECIFIED
Turn-on Time-Nom (ton)
400 ns
Turn-off Time-Nom (toff)
810 ns
Reflow Temperature-Max (s)
未说明
Operating Temperature-Max
150 °C
Rohs Code
有
Package Shape
RECTANGULAR
Number of Elements
2
Part Life Cycle Code
不推荐
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Risk Rank
7.67
Part Package Code
MODULE
包装
Tray
系列
Trench/Fieldstop IGBT3 - E3
无铅代码
无
零件状态
NRND
ECCN 代码
EAR99
类型
Dual
子类别
IGBTs
技术
Si
端子位置
UPPER
终端形式
UNSPECIFIED
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
引脚数量
11
JESD-30代码
R-XUFM-X11
资历状况
不合格
配置
Dual
箱体转运
ISOLATED
极性/通道类型
N-CHANNEL
产品类别
IGBT模块
信道型
N
最大耗散功率(Abs)
2100 W
集电极电流-最大值(IC)
600 A
集电极-发射器电压-最大值
1200 V
栅极-发射极电压-最大值
20 V
VCEsat-最大值
2.15 V
产品
IGBT硅模块
产品类别
IGBT模块
宽度
62 mm
高度
17 mm
长度
152 mm
高度(毫米)
20.8 mm
RoHS状态
是,有豁免
FF450R12ME3拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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