参数名
参数值
参数名
参数值
包装/外壳
EconoDUAL-3
表面安装
NO
终端数量
11
晶体管元件材料
SILICON
ECCN (US)
EAR99
Maximum Collector-Emitter Voltage (V)
1200
Typical Collector Emitter Saturation Voltage (V)
1.7
Maximum Gate Emitter Voltage (V)
±20
Maximum Power Dissipation (mW)
2100000
Maximum Continuous Collector Current (A)
600
Maximum Gate Emitter Leakage Current (uA)
0.4
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
125
Standard Package Name
ECONOD
Supplier Package
ECONOD-3
Military
无
Mounting
Screw
Package Height
17
Package Length
152
Package Width
62
PCB changed
11
Manufacturer Part Number
FF450R12ME3
Manufacturer
Infineon
Maximum Gate Emitter Voltage
20 V
Pd - Power Dissipation
2.1 kW
Maximum Operating Temperature
+ 125 C
Collector-Emitter Saturation Voltage
1.7 V
Unit Weight
12.169517 oz
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
10
Continuous Collector Current at 25 C
600 A
Mounting Styles
底座安装
Part # Aliases
SP000317626 FF450R12ME3BOSA1
Brand
Infineon Technologies
Tradename
EconoDUAL
RoHS
Details
Collector- Emitter Voltage VCEO Max
1200 V
Package Description
FLANGE MOUNT, R-XUFM-X11
Package Style
FLANGE MOUNT
Package Body Material
UNSPECIFIED
Turn-on Time-Nom (ton)
400 ns
Turn-off Time-Nom (toff)
810 ns
Reflow Temperature-Max (s)
未说明
Operating Temperature-Max
150 °C
Rohs Code
有
Package Shape
RECTANGULAR
Number of Elements
2
Part Life Cycle Code
不推荐
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Risk Rank
7.67
Part Package Code
MODULE
包装
Tray
系列
Trench/Fieldstop IGBT3 - E3
无铅代码
无
零件状态
NRND
ECCN 代码
EAR99
类型
Dual
子类别
IGBTs
技术
Si
端子位置
UPPER
终端形式
UNSPECIFIED
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
引脚数量
11
JESD-30代码
R-XUFM-X11
资历状况
不合格
配置
Dual
箱体转运
ISOLATED
极性/通道类型
N-CHANNEL
产品类别
IGBT模块
信道型
N
最大耗散功率(Abs)
2100 W
集电极电流-最大值(IC)
600 A
集电极-发射器电压-最大值
1200 V
栅极-发射极电压-最大值
20 V
VCEsat-最大值
2.15 V
产品
IGBT硅模块
产品类别
IGBT模块
宽度
62 mm
高度
17 mm
长度
152 mm
高度(毫米)
20.8 mm
RoHS状态
是,有豁免