Infineon Technologies AG PTFA080551EV4XWSA1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

12

Maximum VSWR

10

Maximum Drain Source Resistance (mOhm)

150(Typ)@10V

Maximum Power Dissipation (mW)

219000

Output Power (W)

55

Typical Power Gain (dB)

18.5

Maximum Frequency (MHz)

960

Minimum Frequency (MHz)

869

Typical Drain Efficiency (%)

48

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

200

AEC Qualified

无

Supplier Package

Case 36265

Military

无

Mounting

Screw

Package Height

3.61

Package Length

20.31

Package Width

10.16

PCB changed

3

Number of Elements per Chip

1

Channel Mode

Enhancement

ECCN (US)

EAR99

包装

Tray

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N

操作方式

2-Tone|EDGE

RoHS状态

符合RoHS标准