Infineon Technologies AG PTFA092213ELV4R250XTMA1
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PTFA092213ELV4R250XTMA1
1211-PTFA092213ELV4R250XTMA1
晶体管 - FET,MOSFET - 射频
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Trans RF MOSFET N-CH 65V T/R
1最小包装量--
PTFA092213ELV4R250XTMA1详情
Infineon Technologies AG PTFA092213ELV4R250XTMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Channel Mode
Enhancement
Number of Elements per Chip
1
Process Technology
LDMOS
Maximum Drain Source Voltage (V)
65
Maximum Gate Source Voltage (V)
12
Maximum VSWR
10
Maximum Drain Source Resistance (mOhm)
40(Typ)@10V
Output Power (W)
220
Typical Power Gain (dB)
17.5
Maximum Frequency (MHz)
960
Minimum Frequency (MHz)
920
Typical Drain Efficiency (%)
29
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
200
Military
无
包装
卷带
配置
Single
信道型
N
操作方式
CW|2-Carrier W-CDMA
RoHS状态
符合RoHS标准
PTFA092213ELV4R250XTMA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。