Integrated Device Technology IDT70P248L55BYGI
- 收藏
- 对比
IDT70P248L55BYGI
1179-IDT70P248L55BYGI
连接器,连接线
--
大陆
立即发货

Dual-Port SRAM, 4KX16, 55ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, BGA-100
--最小包装量--
IDT70P248L55BYGI详情
Integrated Device Technology IDT70P248L55BYGI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
100
Package Description
6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, BGA-100
Package Style
网格排列
Moisture Sensitivity Levels
3
Number of Words Code
4000
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
BGA100,10X10,20
Operating Temperature-Min
-40 °C
Reflow Temperature-Max (s)
30
Access Time-Max
55 ns
Operating Temperature-Max
85 °C
Rohs Code
有
Manufacturer Part Number
IDT70P248L55BYGI
Number of Words
4096 words
Supply Voltage-Nom (Vsup)
1.8 V
Package Code
BGA
Package Shape
SQUARE
Manufacturer
Integrated Device Technology Inc
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Risk Rank
5.46
Part Package Code
BGA
JESD-609代码
e1
ECCN 代码
EAR99
端子表面处理
Tin/Silver/Copper (Sn/Ag/Cu)
HTS代码
8542.32.00.41
子类别
SRAMs
技术
CMOS
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
0.5 mm
Reach合规守则
unknown
引脚数量
100
JESD-30代码
S-PBGA-B100
资历状况
不合格
电源电压-最大值(Vsup)
1.9 V
电源
1.8,2.5/3 V
温度等级
INDUSTRIAL
电源电压-最小值(Vsup)
1.7 V
端口的数量
2
操作模式
ASYNCHRONOUS
电源电流-最大值
0.025 mA
组织结构
4KX16
输出特性
3-STATE
内存宽度
16
待机电流-最大值
0.000008 A
记忆密度
65536 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
DUAL-PORT SRAM
待机电压-最小值
1.7 V
IDT70P248L55BYGI拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。