Integrated Device Technology IDT70V658S10DR
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IDT70V658S10DR
1179-IDT70V658S10DR
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Dual-Port SRAM, 64KX36, 10ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208
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IDT70V658S10DR详情
Integrated Device Technology IDT70V658S10DR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
208
Package Description
28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208
Package Style
FLATPACK, FINE PITCH
Moisture Sensitivity Levels
3
Number of Words Code
64000
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
QFP208,1.2SQ,20
Reflow Temperature-Max (s)
20
Access Time-Max
10 ns
Operating Temperature-Max
70 °C
Rohs Code
无
Manufacturer Part Number
IDT70V658S10DR
Number of Words
65536 words
Supply Voltage-Nom (Vsup)
3.3 V
Package Code
FQFP
Package Shape
SQUARE
Manufacturer
Integrated Device Technology Inc
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Risk Rank
5.34
Part Package Code
QFP
JESD-609代码
e0
无铅代码
无
ECCN 代码
3A991.B.2.A
端子表面处理
Tin/Lead (Sn/Pb)
HTS代码
8542.32.00.41
子类别
SRAMs
技术
CMOS
端子位置
QUAD
终端形式
鸥翼
峰值回流焊温度(摄氏度)
225
功能数量
1
端子间距
0.5 mm
Reach合规守则
not_compliant
引脚数量
208
JESD-30代码
S-PQFP-G208
资历状况
不合格
电源电压-最大值(Vsup)
3.45 V
电源
2.5/3.3,3.3 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3.15 V
端口的数量
2
操作模式
ASYNCHRONOUS
电源电流-最大值
0.5 mA
组织结构
64KX36
输出特性
3-STATE
座位高度-最大
4.1 mm
内存宽度
36
待机电流-最大值
0.015 A
记忆密度
2359296 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
DUAL-PORT SRAM
待机电压-最小值
3.15 V
宽度
28 mm
长度
28 mm
IDT70V658S10DR拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。