Integrated Device Technology IDT7164S20TPG
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IDT7164S20TPG
1179-IDT7164S20TPG
连接器,连接线
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大陆
立即发货

Standard SRAM, 8KX8, 19ns, CMOS, PDIP28, 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-28
1最小包装量--
IDT7164S20TPG详情
Integrated Device Technology IDT7164S20TPG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
28
Package Description
DIP, DIP28,.3
Package Style
IN-LINE
Number of Words Code
8000
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
DIP28,.3
Reflow Temperature-Max (s)
未说明
Access Time-Max
19 ns
Operating Temperature-Max
70 °C
Rohs Code
有
Manufacturer Part Number
IDT7164S20TPG
Number of Words
8192 words
Supply Voltage-Nom (Vsup)
5 V
Package Code
DIP
Package Shape
RECTANGULAR
Manufacturer
Integrated Device Technology Inc
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Risk Rank
5.41
Part Package Code
DIP
JESD-609代码
e3
无铅代码
有
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn) - annealed
HTS代码
8542.32.00.41
子类别
SRAMs
技术
CMOS
端子位置
DUAL
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
未说明
功能数量
1
端子间距
2.54 mm
Reach合规守则
compliant
引脚数量
28
JESD-30代码
R-PDIP-T28
资历状况
不合格
电源电压-最大值(Vsup)
5.5 V
电源
5 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
4.5 V
操作模式
ASYNCHRONOUS
电源电流-最大值
0.1 mA
组织结构
8KX8
输出特性
3-STATE
座位高度-最大
4.572 mm
内存宽度
8
待机电流-最大值
0.015 A
记忆密度
65536 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
标准SRAM
待机电压-最小值
4.5 V
宽度
7.62 mm
长度
34.671 mm
IDT7164S20TPG拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。