Integrated Device Technology IDT71V321L35J
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IDT71V321L35J
1179-IDT71V321L35J
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Dual-Port SRAM, 2KX8, 35ns, CMOS, PQCC52, PLASTIC, LCC-52
1最小包装量--
IDT71V321L35J详情
Integrated Device Technology IDT71V321L35J重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
52
Package Description
PLASTIC, LCC-52
Package Style
CHIP CARRIER
Moisture Sensitivity Levels
3
Number of Words Code
2000
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
LDCC52,.8SQ
Reflow Temperature-Max (s)
30
Access Time-Max
35 ns
Operating Temperature-Max
70 °C
Rohs Code
无
Manufacturer Part Number
IDT71V321L35J
Part Package Code
LCC
Risk Rank
5.24
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Life Cycle Code
Obsolete
Manufacturer
Integrated Device Technology Inc
Package Shape
SQUARE
Package Code
QCCJ
Supply Voltage-Nom (Vsup)
3.3 V
Number of Words
2048 words
JESD-609代码
e0
无铅代码
无
ECCN 代码
EAR99
端子表面处理
Tin/Lead (Sn85Pb15)
附加功能
BATTERY BACKUP;AUTOMATIC POWER DOWN
HTS代码
8542.32.00.41
子类别
SRAMs
技术
CMOS
端子位置
QUAD
终端形式
J BEND
峰值回流焊温度(摄氏度)
225
功能数量
1
端子间距
1.27 mm
Reach合规守则
not_compliant
引脚数量
52
JESD-30代码
S-PQCC-J52
资历状况
不合格
电源电压-最大值(Vsup)
3.6 V
电源
3.3 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3 V
端口的数量
2
操作模式
ASYNCHRONOUS
电源电流-最大值
0.095 mA
组织结构
2KX8
输出特性
3-STATE
座位高度-最大
4.57 mm
内存宽度
8
待机电流-最大值
0.0015 A
记忆密度
16384 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
DUAL-PORT SRAM
待机电压-最小值
2 V
宽度
19.1262 mm
长度
19.1262 mm
IDT71V321L35J拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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