Integrated Device Technology IDT71V416YL10BE
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IDT71V416YL10BE
1179-IDT71V416YL10BE
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Standard SRAM, 256KX16, 10ns, CMOS, PBGA48, 9 X 9 MM, BGA-48
1最小包装量--
IDT71V416YL10BE详情
Integrated Device Technology IDT71V416YL10BE重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
48
Package Description
9 X 9 MM, BGA-48
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Moisture Sensitivity Levels
4
Number of Words Code
256000
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
BGA48,6X8,30
Reflow Temperature-Max (s)
20
Access Time-Max
10 ns
Operating Temperature-Max
70 °C
Rohs Code
无
Manufacturer Part Number
IDT71V416YL10BE
Number of Words
262144 words
Supply Voltage-Nom (Vsup)
3.3 V
Package Code
TFBGA
Package Shape
SQUARE
Manufacturer
Integrated Device Technology Inc
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Risk Rank
5.24
Part Package Code
BGA
JESD-609代码
e0
ECCN 代码
3A991.B.2.A
端子表面处理
Tin/Lead (Sn63Pb37)
HTS代码
8542.32.00.41
子类别
SRAMs
技术
CMOS
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
225
功能数量
1
端子间距
0.75 mm
Reach合规守则
not_compliant
引脚数量
48
JESD-30代码
S-PBGA-B48
资历状况
不合格
电源电压-最大值(Vsup)
3.6 V
电源
3.3 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3 V
操作模式
ASYNCHRONOUS
电源电流-最大值
0.18 mA
组织结构
256KX16
输出特性
3-STATE
座位高度-最大
1.2 mm
内存宽度
16
待机电流-最大值
0.01 A
记忆密度
4194304 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
标准SRAM
待机电压-最小值
3 V
宽度
9 mm
长度
9 mm
IDT71V416YL10BE拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。