IXYS Integrated Circuits Division / Littelfuse IXFR12N100F

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

10

Maximum Drain Source Resistance (MOhm)

1050@10V

Typical Gate Charge @ Vgs (nC)

77@10V

Typical Gate Charge @ 10V (nC)

77

Typical Input Capacitance @ Vds (pF)

2700@25V

Maximum Power Dissipation (mW)

250000

Typical Fall Time (ns)

12

Typical Rise Time (ns)

9.8

Typical Turn-Off Delay Time (ns)

31

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Standard Package Name

SOP

Supplier Package

ISOPLUS 247

Package Description

ISOPLUS247, 3 PIN

Package Style

IN-LINE

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

IXFR12N100F

Package Shape

RECTANGULAR

Manufacturer

IXYS Corporation

Number of Elements

1

Part Life Cycle Code

Transferred

Ihs Manufacturer

IXYS CORP

Risk Rank

5.71

Drain Current-Max (ID)

10 A

JESD-609代码

e1

无铅代码

有

零件状态

Unconfirmed

端子表面处理

Tin/Silver/Copper (Sn/Ag/Cu)

附加功能

雪崩 额定

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

3

JESD-30代码

R-PSIP-T3

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

ISOLATED

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

漏极-源极导通最大电阻

1.05 Ω

脉冲漏极电流-最大值(IDM)

48 A

DS 击穿电压-最小值

1000 V

信道型

N

雪崩能量等级（Eas）

1000 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR