IXYS Integrated Circuits Division / Littelfuse IXTB1909

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

PolarHV

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

3.5

Maximum Continuous Drain Current (A)

100

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (mOhm)

49@10V

Typical Gate Charge @ Vgs (nC)

310@10V

Typical Gate Charge @ 10V (nC)

310

Typical Input Capacitance @ Vds (pF)

21@25V

Maximum Power Dissipation (mW)

1250000

Typical Fall Time (ns)

35

Typical Rise Time (ns)

200

Typical Turn-Off Delay Time (ns)

91

Typical Turn-On Delay Time (ns)

49

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

厂商

IXYS

Product Status

活跃

系列

*

零件状态

Custom

配置

Single

信道型

N