Jilin Sino-Microelectronics JCS650S
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JCS650S
1604-JCS650S
晶体管 - FET,MOSFET - 单个
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200V 28A 158W 85mΩ@10V,14A 4V@250uA 1 N-Channel TO-263 MOSFETs ROHS
1最小包装量--
JCS650S详情
Jilin Sino-Microelectronics JCS650S重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
200V
Power Dissipation (Pd)
158W
Drain Source On Resistance (RDS(on)@Vgs,Id)
85mΩ@10V,14A
Gate Threshold Voltage (Vgs(th)@Id)
4V@250uA
Package
Tape & Reel (TR)
类型
1 N-Channel
Continuous Drain Current (Id)
28A
JCS650S拓展信息
Jilin Sino-Microelectronics
A Power microelectronics
A Power microelectronics
WPMtek(Wei Pan Microelectronics)
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
WUXI UNIGROUP MICRO
Shandong Jingdao Microelectronics








哦! 它是空的。