Wuxi China Resources Huajing Microelectronics CS1N60A3H
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CS1N60A3H
1604-CS1N60A3H
晶体管 - FET,MOSFET - 单个
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600V 800mA 25W 15Ω@10V,400mA 4V@250uA 1 N-Channel TO-251(IPAK) MOSFETs ROHS
1最小包装量--
CS1N60A3H详情
Wuxi China Resources Huajing Microelectronics CS1N60A3H重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
600V
Power Dissipation (Pd)
25W
Drain Source On Resistance (RDS(on)@Vgs,Id)
15Ω@10V,400mA
Gate Threshold Voltage (Vgs(th)@Id)
4V@250uA
Package
Tube-packed
类型
1 N-Channel
Continuous Drain Current (Id)
800mA
CS1N60A3H拓展信息
Jilin Sino-Microelectronics
A Power microelectronics
A Power microelectronics
WPMtek(Wei Pan Microelectronics)
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
WUXI UNIGROUP MICRO
Shandong Jingdao Microelectronics








哦! 它是空的。