Hangzhou Silan Microelectronics SVF2N60RM

RoHS

true

Drain Source Voltage (Vdss)

600V

Drain Source On Resistance (RDS(on)@Vgs,Id)

3.7Ω@10V,1A

Power Dissipation (Pd)

34W

Gate Threshold Voltage (Vgs(th)@Id)

4V@250uA

Reverse Transfer Capacitance (Crss@Vds)

2.7pF@25V

Input Capacitance (Ciss@Vds)

250pF@25V

Total Gate Charge (Qg@Vgs)

8.92nC@10V

Package

Tube-packed

操作温度

-55℃~+150℃@(Tj)

类型

1 N-Channel

Continuous Drain Current (Id)

2A