Littelfuse IXFA4N100P-TRL

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

4

Maximum Drain Source Resistance (mOhm)

3300@10V

Typical Gate Charge @ Vgs (nC)

26@10V

Typical Gate Charge @ 10V (nC)

26

Typical Input Capacitance @ Vds (pF)

1456@25V

Maximum Power Dissipation (mW)

150000

Typical Fall Time (ns)

50

Typical Rise Time (ns)

36

Typical Turn-Off Delay Time (ns)

37

Typical Turn-On Delay Time (ns)

24

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.4(Max)

Package Length

10.41(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

包装

卷带

零件状态

活跃

引脚数量

3

配置

Single

信道型

N