Littelfuse IXFA4N100Q

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.10.00.80

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

4

Maximum Drain Source Resistance (MOhm)

3000@10V

Typical Gate Charge @ Vgs (nC)

39@10V

Typical Gate Charge @ 10V (nC)

39

Typical Input Capacitance @ Vds (pF)

1050@25V

Maximum Power Dissipation (mW)

150000

Typical Fall Time (ns)

18

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

32

Typical Turn-On Delay Time (ns)

17

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.65(Max)

Package Length

10.41(Max)

PCB changed

2

Tab

Tab

Supplier Package

D2PAK

MSL

-

Qualification

-

Continuous Drain Current Id

4A

零件状态

活跃

引脚数量

3

配置

Single

功率耗散

150W

信道型

N