Littelfuse IXFB82N60Q3

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

6.5

Maximum Continuous Drain Current (A)

82

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (mOhm)

75@10V

Typical Gate Charge @ Vgs (nC)

275@10V

Typical Gate Charge @ 10V (nC)

275

Typical Input Capacitance @ Vds (pF)

13500@25V

Maximum Power Dissipation (mW)

1560000

Typical Fall Time (ns)

14

Typical Rise Time (ns)

13

Typical Turn-Off Delay Time (ns)

60

Typical Turn-On Delay Time (ns)

40

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.59(Max)

Package Width

5.31(Max)

Package Length

20.29(Max)

PCB changed

3

Tab

Tab

Supplier Package

PLUS 264

零件状态

活跃

引脚数量

3

配置

Single

信道型

N