Littelfuse IXFB90N85X

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

850

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5.5

Maximum Continuous Drain Current (A)

90

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (MOhm)

41@10V

Typical Gate Charge @ Vgs (nC)

340@10V

Typical Gate Charge @ 10V (nC)

340

Typical Input Capacitance @ Vds (pF)

13300@25V

Maximum Power Dissipation (mW)

1785000

Typical Fall Time (ns)

8

Typical Rise Time (ns)

20

Typical Turn-Off Delay Time (ns)

126

Typical Turn-On Delay Time (ns)

50

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.59(Max)

Package Width

5.31(Max)

Package Length

20.29(Max)

PCB changed

3

Tab

Tab

Supplier Package

PLUS 264

Continuous Drain Current

90(A)

Drain-Source On-Volt

850(V)

Operating Temperature Classification

Military

Package Type

PLUS 264

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Number of Elements

1

Rad Hardened

无

零件状态

活跃

类型

功率MOSFET

引脚数量

3

极性

N

配置

Single

功率耗散

1785(W)

信道型

N