Littelfuse IXFH12N120P

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1200

Maximum Gate Source Voltage (V)

±30

Operating Junction Temperature (°C)

150

Maximum Continuous Drain Current (A)

12

Maximum Drain Source Resistance (mOhm)

1350@10V

Typical Gate Charge @ Vgs (nC)

103@10V

Typical Gate Charge @ 10V (nC)

103

Typical Input Capacitance @ Vds (pF)

5400@25V

Maximum Power Dissipation (mW)

543000

Typical Fall Time (ns)

34

Typical Rise Time (ns)

25

Typical Turn-Off Delay Time (ns)

62

Typical Turn-On Delay Time (ns)

34

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247

零件状态

活跃

引脚数量

3

配置

Single

信道型

N