Littelfuse IXFH52N50P2

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

52

Maximum Drain Source Resistance (mOhm)

120@10V

Typical Gate Charge @ Vgs (nC)

113@10V

Typical Gate Charge @ 10V (nC)

113

Typical Input Capacitance @ Vds (pF)

6800@25V

Maximum Power Dissipation (mW)

960000

Typical Fall Time (ns)

8

Typical Rise Time (ns)

10

Typical Turn-Off Delay Time (ns)

46

Typical Turn-On Delay Time (ns)

22

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247

零件状态

活跃

引脚数量

3

配置

单排双泄

信道型

N