Littelfuse IXFK150N30X3

包装/外壳

TO-264-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

300

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

150

Maximum Drain Source Resistance (MOhm)

8.3@10V

Typical Gate Charge @ Vgs (nC)

177@10V

Typical Gate Charge @ 10V (nC)

177

Typical Input Capacitance @ Vds (pF)

13100@25V

Maximum Power Dissipation (mW)

890000

Typical Fall Time (ns)

14

Typical Rise Time (ns)

32

Typical Turn-Off Delay Time (ns)

187

Typical Turn-On Delay Time (ns)

40

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.3(Max)

Package Width

5.3(Max)

Package Length

20.3(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-264

Continuous Drain Current Id

150A

Qualification

-

Vds - Drain-Source Breakdown Voltage

300 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

890 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

254 nC

Rds On - Drain-Source Resistance

8.3 mOhms

Id - Continuous Drain Current

150 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

890W

信道型

N