Littelfuse IXFK360N15T2

EU RoHS

符合免除

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

GigaMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

150

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

360

Maximum Drain Source Resistance (MOhm)

4@10V

Typical Gate Charge @ Vgs (nC)

715@10V

Typical Gate Charge @ 10V (nC)

715

Typical Input Capacitance @ Vds (pF)

47.5@25V

Maximum Power Dissipation (mW)

1670000

Typical Fall Time (ns)

265

Typical Rise Time (ns)

170

Typical Turn-Off Delay Time (ns)

115

Typical Turn-On Delay Time (ns)

50

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

26.16(Max)

Package Width

5.13(Max)

Package Length

19.96(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-264

零件状态

活跃

引脚数量

3

配置

Single

信道型

N