Littelfuse IXFL60N80P

材料

Si

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

800

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

40

Maximum Drain Source Resistance (mOhm)

150@10V

Typical Gate Charge @ Vgs (nC)

250@10V

Typical Gate Charge @ 10V (nC)

250

Typical Input Capacitance @ Vds (pF)

18000@25V

Maximum Power Dissipation (mW)

625000

Typical Fall Time (ns)

26

Typical Rise Time (ns)

29

Typical Turn-Off Delay Time (ns)

110

Typical Turn-On Delay Time (ns)

36

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.42(Max)

Package Width

5.21(Max)

Package Length

20.29(Max)

PCB changed

3

Tab

Tab

Supplier Package

ISOPLUS 264

零件状态

活跃

引脚数量

3

配置

Single

信道型

N