Littelfuse IXFN120N65X2

包装/外壳

SOT-227-4

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

108

Maximum Drain Source Resistance (MOhm)

24@10V

Typical Gate Charge @ Vgs (nC)

240@10V

Typical Gate Charge @ 10V (nC)

240

Typical Input Capacitance @ Vds (pF)

14000@25V

Maximum Power Dissipation (mW)

890000

Typical Fall Time (ns)

12

Typical Rise Time (ns)

26

Typical Turn-Off Delay Time (ns)

82

Typical Turn-On Delay Time (ns)

39

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Screw

Package Height

9.6(Max)

Package Width

25.42(Max)

Package Length

38.23(Max)

PCB changed

4

Standard Package Name

SOT

Supplier Package

SOT-227B

Lead Shape

Screw

Continuous Drain Current Id

108A

Typical Turn-On Delay Time

64 ns

Pd - Power Dissipation

890 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

螺钉安装

Rds On - Drain-Source Resistance

24 mOhms

Typical Turn-Off Delay Time

86 ns

系列

650V Ultra Junction X2

零件状态

活跃

类型

HiperFET

子类别

Discrete Semiconductor Modules

技术

Si

引脚数量

4

配置

单双源

功率耗散

890W

上升时间

23 ns

产品类别

Discrete Semiconductor Modules

信道型

N

产品

功率MOSFET模块