Littelfuse IXFP4N100P

包装/外壳

TO-220-3

EU RoHS

Compliant

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

4

Maximum Drain Source Resistance (MOhm)

3300@10V

Typical Gate Charge @ Vgs (nC)

26@10V

Typical Gate Charge @ 10V (nC)

26

Typical Input Capacitance @ Vds (pF)

1456@25V

Maximum Power Dissipation (mW)

150000

Typical Fall Time (ns)

50

Typical Rise Time (ns)

36

Typical Turn-Off Delay Time (ns)

37

Typical Turn-On Delay Time (ns)

24

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.15(Max)

Package Width

4.83(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-220AB

Vds - Drain-Source Breakdown Voltage

1 kV

Vgs th - Gate-Source Threshold Voltage

6 V

Pd - Power Dissipation

150 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

26 nC

Rds On - Drain-Source Resistance

3.3 Ohms

Id - Continuous Drain Current

4 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N