Littelfuse IXFQ94N30P3

EU RoHS

符合免除

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

300

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

94

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (mOhm)

36@10V

Typical Gate Charge @ Vgs (nC)

102@10V

Typical Gate Charge @ 10V (nC)

102

Typical Input Capacitance @ Vds (pF)

5510@25V

Maximum Power Dissipation (mW)

1040000

Typical Fall Time (ns)

11

Typical Rise Time (ns)

19

Typical Turn-Off Delay Time (ns)

49

Typical Turn-On Delay Time (ns)

23

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Width

4.9(Max)

Package Length

15.8(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-3P

零件状态

活跃

引脚数量

3

配置

Single

信道型

N