Littelfuse IXFR80N60P3

包装/外壳

TO-247-3

材料

Si

EU RoHS

符合免除

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

48

Maximum Drain Source Resistance (MOhm)

85@10V

Typical Gate Charge @ Vgs (nC)

190@10V

Typical Gate Charge @ 10V (nC)

190

Typical Input Capacitance @ Vds (pF)

13100@25V

Maximum Power Dissipation (mW)

540000

Typical Fall Time (ns)

8

Typical Rise Time (ns)

25

Typical Turn-Off Delay Time (ns)

87

Typical Turn-On Delay Time (ns)

48

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Supplier Package

ISOPLUS 247

Id - Continuous Drain Current

48 A

Rds On - Drain-Source Resistance

76 mOhms

Qg - Gate Charge

190 nC

Mounting Styles

通孔

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

540 W

Vgs th - Gate-Source Threshold Voltage

5 V

Vds - Drain-Source Breakdown Voltage

600 V

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

信道型

N