Littelfuse IXFT150N20T

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

150

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

15@10V

Typical Gate Charge @ Vgs (nC)

177@10V

Typical Gate Charge @ 10V (nC)

177

Typical Input Capacitance @ Vds (pF)

11700@25V

Maximum Power Dissipation (mW)

890000

Typical Fall Time (ns)

12

Typical Rise Time (ns)

12

Typical Turn-Off Delay Time (ns)

45

Typical Turn-On Delay Time (ns)

43

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

5.1(Max)

Package Width

14(Max)

Package Length

16.05(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-268AA

零件状态

活跃

引脚数量

3

配置

Single

信道型

N