Littelfuse IXFX180N25T

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

GigaMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

250

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

180

Maximum Drain Source Resistance (MOhm)

12.9@10V

Typical Gate Charge @ Vgs (nC)

345@10V

Typical Gate Charge @ 10V (nC)

345

Typical Input Capacitance @ Vds (pF)

28000@25V

Maximum Power Dissipation (mW)

1390000

Typical Fall Time (ns)

28

Typical Rise Time (ns)

33

Typical Turn-Off Delay Time (ns)

100

Typical Turn-On Delay Time (ns)

37

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Supplier Package

PLUS 247

零件状态

活跃

引脚数量

3

配置

Single

信道型

N