Littelfuse IXFX20N120P

包装/外壳

TO-247-3

EU RoHS

符合免除

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Supplier Package

PLUS 247

Tab

Tab

PCB changed

3

Package Length

16.13(Max)

Package Width

5.21(Max)

Package Height

21.34(Max)

Mounting

通孔

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

49

Typical Turn-Off Delay Time (ns)

72

Typical Rise Time (ns)

45

Typical Fall Time (ns)

70

Maximum Power Dissipation (mW)

780000

Typical Input Capacitance @ Vds (pF)

11100@25V

Typical Gate Charge @ 10V (nC)

193

Typical Gate Charge @ Vgs (nC)

193@10V

Maximum Drain Source Resistance (MOhm)

570@10V

Maximum Continuous Drain Current (A)

20

Maximum Gate Source Voltage (V)

±30

Maximum Drain Source Voltage (V)

1200

Number of Elements per Chip

1

Channel Mode

Enhancement

Process Technology

HiperFET

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

780 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

193 nC

Rds On - Drain-Source Resistance

570 mOhms

Id - Continuous Drain Current

20 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N