Littelfuse IXFX30N100Q2

包装/外壳

TO-247-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.21.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

30

Maximum Drain Source Resistance (mOhm)

400@10V

Typical Gate Charge @ Vgs (nC)

186@10V

Typical Gate Charge @ 10V (nC)

186

Typical Input Capacitance @ Vds (pF)

8200@25V

Maximum Power Dissipation (mW)

735000

Typical Fall Time (ns)

10

Typical Rise Time (ns)

14

Typical Turn-Off Delay Time (ns)

60

Typical Turn-On Delay Time (ns)

22

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Supplier Package

PLUS 247

Vds - Drain-Source Breakdown Voltage

1 kV

Pd - Power Dissipation

735 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Rds On - Drain-Source Resistance

400 mOhms

Id - Continuous Drain Current

30 A

系列

IXFX30N100

零件状态

NRND

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N