Littelfuse IXFX64N50P

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

极性HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

64

Maximum Drain Source Resistance (MOhm)

85@10V

Typical Gate Charge @ Vgs (nC)

150@10V

Typical Gate Charge @ 10V (nC)

150

Typical Input Capacitance @ Vds (pF)

9700@25V

Maximum Power Dissipation (mW)

830000

Typical Fall Time (ns)

22

Typical Rise Time (ns)

25

Typical Turn-Off Delay Time (ns)

85

Typical Turn-On Delay Time (ns)

30

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Supplier Package

PLUS 247

Continuous Drain Current

64(A)

Drain-Source On-Volt

500(V)

Operating Temperature Classification

Military

Package Type

PLUS 247

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Number of Elements

1

Rad Hardened

无

零件状态

活跃

类型

功率MOSFET

引脚数量

3

极性

N

配置

Single

功率耗散

830(W)

信道型

N