Littelfuse IXTA05N100-TRL

包装/外壳

TO-263HV-3

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

0.75

Maximum Drain Source Resistance (MOhm)

17000@10V

Typical Gate Charge @ Vgs (nC)

7.8@10V

Typical Gate Charge @ 10V (nC)

7.8

Typical Input Capacitance @ Vds (pF)

260@25V

Maximum Power Dissipation (mW)

40000

Typical Fall Time (ns)

28

Typical Rise Time (ns)

19

Typical Turn-Off Delay Time (ns)

40

Typical Turn-On Delay Time (ns)

11

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.65(Max)

Package Length

10.29(Max)

PCB changed

2

Tab

Tab

Supplier Package

D2PAK

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

7.8 nC

Rds On - Drain-Source Resistance

17 Ohms

Id - Continuous Drain Current

750 mA

Transistor Polarity

N-Channel

Pd - Power Dissipation

40 W

Vgs th - Gate-Source Threshold Voltage

2.5 V

Vds - Drain-Source Breakdown Voltage

1 kV

包装

卷带

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N