Littelfuse IXTA18P10T

包装/外壳

TO-263-3

EU RoHS

Compliant

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±15

Maximum Continuous Drain Current (A)

18

Maximum Drain Source Resistance (MOhm)

120@10V

Typical Gate Charge @ Vgs (nC)

39@10V

Typical Gate Charge @ 10V (nC)

39

Typical Input Capacitance @ Vds (pF)

2100@25V

Maximum Power Dissipation (mW)

83000

Typical Fall Time (ns)

22

Typical Rise Time (ns)

26

Typical Turn-Off Delay Time (ns)

44

Typical Turn-On Delay Time (ns)

19

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.65(Max)

Package Length

10.29(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-263AA

Vds - Drain-Source Breakdown Voltage

100 V

Transistor Polarity

P-Channel

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

120 mOhms

Id - Continuous Drain Current

18 A

系列

IXTA18P10

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

信道型

P