Littelfuse IXTA1R4N120P

EU RoHS

Compliant

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

Polar

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1200

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

4.5

Operating Junction Temperature (°C)

150

Maximum Continuous Drain Current (A)

1.4

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

5

Maximum Drain Source Resistance (MOhm)

13000@10V

Typical Gate Charge @ Vgs (nC)

24.8@10V

Typical Gate Charge @ 10V (nC)

24.8

Typical Gate to Drain Charge (nC)

12.8

Typical Gate to Source Charge (nC)

4.4

Typical Input Capacitance @ Vds (pF)

666@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

7.6@25V

Minimum Gate Threshold Voltage (V)

2.5

Typical Output Capacitance (pF)

36

Maximum Power Dissipation (mW)

86000

Typical Fall Time (ns)

29

Typical Rise Time (ns)

27

Typical Turn-Off Delay Time (ns)

78

Typical Turn-On Delay Time (ns)

25

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Pulsed Drain Current @ TC=25°C (A)

3

Typical Gate Plateau Voltage (V)

4.75

Typical Reverse Recovery Time (ns)

900

Maximum Diode Forward Voltage (V)

1.5

Maximum Positive Gate Source Voltage (V)

30

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.65(Max)

Package Length

10.29(Max)

PCB changed

2

Tab

Tab

Supplier Package

D2PAK

零件状态

活跃

引脚数量

3

配置

Single

信道型

N