Littelfuse IXTA32P05T-TRL

包装/外壳

TO-263-3

EU RoHS

Compliant

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TrenchP

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

50

Maximum Gate Source Voltage (V)

±15

Maximum Continuous Drain Current (A)

32

Maximum Drain Source Resistance (MOhm)

39@10V

Typical Gate Charge @ Vgs (nC)

46@10V

Typical Gate Charge @ 10V (nC)

46

Typical Input Capacitance @ Vds (pF)

1975@25V

Maximum Power Dissipation (mW)

83000

Typical Fall Time (ns)

27

Typical Rise Time (ns)

28

Typical Turn-Off Delay Time (ns)

39

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

4.7(Max)

Package Width

9.4(Max)

Package Length

10.41(Max)

PCB changed

2

Tab

Tab

Supplier Package

D2PAK

Vds - Drain-Source Breakdown Voltage

50 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

83 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 15 V, + 15 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

46 nC

Rds On - Drain-Source Resistance

39 mOhms

Id - Continuous Drain Current

32 A

包装

卷带

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

P