Littelfuse IXTA3N100D2HV

包装/外壳

TO-263HV-3

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Depletion

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Resistance (mOhm)

6000@0V

Typical Gate Charge @ Vgs (nC)

37.5@5V

Typical Input Capacitance @ Vds (pF)

1020@25V

Maximum Power Dissipation (mW)

125000

Typical Fall Time (ns)

40

Typical Rise Time (ns)

67

Typical Turn-Off Delay Time (ns)

34

Typical Turn-On Delay Time (ns)

27

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

4.7(Max)

Package Width

9.4(Max)

Package Length

10.2(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-263HV

MSL

-

Qualification

-

Continuous Drain Current Id

3A

Vds - Drain-Source Breakdown Voltage

1 kV

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

125 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

37.5 nC

Rds On - Drain-Source Resistance

6 Ohms

Id - Continuous Drain Current

3 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

125W

信道型

N