Littelfuse IXTA3N110

包装/外壳

TO-263-3

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

3

Maximum Drain Source Resistance (mOhm)

4000@10V

Typical Gate Charge @ Vgs (nC)

39@10V

Typical Gate Charge @ 10V (nC)

39

Typical Input Capacitance @ Vds (pF)

1050@25V

Maximum Power Dissipation (mW)

150000

Typical Fall Time (ns)

18

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

32

Typical Turn-On Delay Time (ns)

17

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.65(Max)

Package Length

10.29(Max)

PCB changed

2

Tab

Tab

Supplier Package

D2PAK

Id - Continuous Drain Current

3 A

Rds On - Drain-Source Resistance

4 Ohms

Mounting Styles

SMD/SMT

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

150 W

Vds - Drain-Source Breakdown Voltage

1.1 kV

零件状态

Obsolete

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N