Littelfuse IXTF1N450

材料

Si

EU RoHS

Compliant

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

4500

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

6

Maximum Continuous Drain Current (A)

0.9

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (MOhm)

80000@10V

Typical Gate Charge @ Vgs (nC)

40@10V

Typical Gate Charge @ 10V (nC)

40

Typical Input Capacitance @ Vds (pF)

1730@25V

Maximum Power Dissipation (mW)

160000

Typical Fall Time (ns)

127

Typical Rise Time (ns)

60

Typical Turn-Off Delay Time (ns)

58

Typical Turn-On Delay Time (ns)

34

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

20.29(Max)

PCB changed

3

Tab

Tab

Supplier Package

ISOPLUS I4-PAK

Qualification

-

Continuous Drain Current Id

900mA

零件状态

活跃

引脚数量

3

配置

Single

功率耗散

160W

信道型

N