Littelfuse IXTH10P50

包装/外壳

TO-247-3

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.10.00.80

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

10

Maximum Drain Source Resistance (MOhm)

900@10V

Typical Gate Charge @ Vgs (nC)

130@10V

Typical Gate Charge @ 10V (nC)

130

Typical Input Capacitance @ Vds (pF)

4700@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

35

Typical Rise Time (ns)

27

Typical Turn-Off Delay Time (ns)

35

Typical Turn-On Delay Time (ns)

33

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-247

Supplier Package

TO-247AD

Lead Shape

通孔

Continuous Drain Current

10(A)

Drain-Source On-Volt

500(V)

Operating Temperature Classification

Military

Package Type

TO-247AD

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Number of Elements

1

Rad Hardened

无

Vds - Drain-Source Breakdown Voltage

500 V

Pd - Power Dissipation

300 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Rds On - Drain-Source Resistance

750 mOhms

Id - Continuous Drain Current

11 A

零件状态

NRND

类型

功率MOSFET

技术

Si

引脚数量

3

极性

P

配置

Single

通道数量

1 Channel

功率耗散

300(W)

信道型

P