Littelfuse IXTH32P20T

包装/外壳

TO-247-3

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TrenchP

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±15

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

32

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (mOhm)

130@10V

Typical Input Capacitance @ Vds (pF)

14500@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

12

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

57

Typical Turn-On Delay Time (ns)

32

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247

Vds - Drain-Source Breakdown Voltage

200 V

Transistor Polarity

P-Channel

Mounting Styles

通孔

Rds On - Drain-Source Resistance

130 mOhms

Id - Continuous Drain Current

32 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

信道型

P