Littelfuse IXTK200N10L2

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4.5

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

200

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (mOhm)

11@10V

Typical Gate Charge @ Vgs (nC)

540@10V

Typical Gate Charge @ 10V (nC)

540

Typical Gate to Drain Charge (nC)

226

Typical Gate to Source Charge (nC)

115

Typical Reverse Recovery Charge (nC)

3000

Typical Input Capacitance @ Vds (pF)

23000@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

610

Minimum Gate Threshold Voltage (V)

2

Typical Output Capacitance (pF)

3200

Maximum Power Dissipation (mW)

1040000

Typical Fall Time (ns)

27

Typical Rise Time (ns)

225

Typical Turn-Off Delay Time (ns)

127

Typical Turn-On Delay Time (ns)

40

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Positive Gate Source Voltage (V)

20

Maximum Pulsed Drain Current @ TC=25°C (A)

500

Typical Gate Plateau Voltage (V)

6

Typical Reverse Recovery Time (ns)

245

Maximum Diode Forward Voltage (V)

1.4

Mounting

通孔

Package Height

26.16(Max)

Package Width

5.13(Max)

Package Length

19.96(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-264AA

Lead Shape

通孔

Qualification

-

Continuous Drain Current Id

200A

零件状态

活跃

引脚数量

3

配置

Single

功率耗散

1.04kW

信道型

N