Littelfuse IXTK20N150

包装/外壳

TO-264-3

EU RoHS

符合免除

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1500

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

20

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (MOhm)

1000@10V

Typical Gate Charge @ Vgs (nC)

215@10V

Typical Gate Charge @ 10V (nC)

215

Typical Input Capacitance @ Vds (pF)

7800@25V

Maximum Power Dissipation (mW)

1250000

Typical Fall Time (ns)

33

Typical Rise Time (ns)

30

Typical Turn-Off Delay Time (ns)

80

Typical Turn-On Delay Time (ns)

35

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.16(Max)

Package Width

5.13(Max)

Package Length

19.96(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-264AA

Vds - Drain-Source Breakdown Voltage

1.5 kV

Transistor Polarity

N-Channel

Mounting Styles

通孔

Rds On - Drain-Source Resistance

1 Ohms

Id - Continuous Drain Current

20 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

信道型

N