Littelfuse IXTL2N450

包装/外壳

ISOPLUS-i4-PAK-3

材料

Si

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

4500

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

6

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

2

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (MOhm)

20000@10V

Typical Gate Charge @ Vgs (nC)

180@10V

Typical Gate Charge @ 10V (nC)

180

Typical Gate to Drain Charge (nC)

83@10V

Typical Gate to Source Charge (nC)

34

Typical Input Capacitance @ Vds (pF)

6860@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

105@25V

Minimum Gate Threshold Voltage (V)

3.5

Typical Output Capacitance (pF)

267

Maximum Power Dissipation (mW)

220000

Typical Fall Time (ns)

205

Typical Rise Time (ns)

34

Typical Turn-Off Delay Time (ns)

123

Typical Turn-On Delay Time (ns)

40

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Positive Gate Source Voltage (V)

20

Maximum Pulsed Drain Current @ TC=25°C (A)

8

Typical Gate Plateau Voltage (V)

6

Typical Reverse Recovery Time (ns)

1750

Maximum Diode Forward Voltage (V)

3

Mounting

通孔

Package Height

26.42(Max)

Package Width

5.21(Max)

Package Length

20.29(Max)

PCB changed

3

Tab

Tab

Supplier Package

ISOPLUS I5-PAK

Lead Shape

通孔

Vds - Drain-Source Breakdown Voltage

4.5 kV

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

220 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

180 nC

Rds On - Drain-Source Resistance

20 Ohms

Id - Continuous Drain Current

2 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N