Littelfuse IXTN40P50P

包装/外壳

SOT-227-4

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

40

Maximum Drain Source Resistance (mOhm)

230@10V

Typical Gate Charge @ Vgs (nC)

205@10V

Typical Gate Charge @ 10V (nC)

205

Typical Input Capacitance @ Vds (pF)

11500@25V

Maximum Power Dissipation (mW)

890000

Typical Fall Time (ns)

34

Typical Rise Time (ns)

59

Typical Turn-Off Delay Time (ns)

90

Typical Turn-On Delay Time (ns)

37

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Screw

Package Width

25.42(Max)

Package Length

38.23(Max)

PCB changed

4

Supplier Package

SOT-227B

Continuous Drain Current Id

40A

Vr - Reverse Voltage

100 V

Typical Turn-On Delay Time

37 ns

Pd - Power Dissipation

890 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

底座安装

Rds On - Drain-Source Resistance

230 mOhms

Typical Turn-Off Delay Time

90 ns

零件状态

活跃

类型

Polar Power MOSFET

子类别

Discrete Semiconductor Modules

技术

Si

引脚数量

4

配置

单双源

功率耗散

890W

上升时间

59 ns

产品类别

Discrete Semiconductor Modules

信道型

P

产品

功率MOSFET模块