Littelfuse IXTN600N04T2

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

GigaMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

3.5

Maximum Continuous Drain Current (A)

600

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

1.3@10V

Typical Gate Charge @ Vgs (nC)

590@10V

Typical Gate Charge @ 10V (nC)

590

Typical Input Capacitance @ Vds (pF)

40000@25V

Maximum Power Dissipation (mW)

940000

Typical Fall Time (ns)

250

Typical Rise Time (ns)

20

Typical Turn-Off Delay Time (ns)

90

Typical Turn-On Delay Time (ns)

40

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

Screw

Package Width

25.42(Max)

Package Length

38.23(Max)

PCB changed

4

Supplier Package

SOT-227B

Qualification

-

Continuous Drain Current Id

600A

零件状态

活跃

引脚数量

4

配置

单双源

功率耗散

940W

信道型

N