Littelfuse IXTP170N075T2

包装/外壳

TO-220-3

EU RoHS

Compliant

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TrenchT2

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

75

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

170

Maximum Drain Source Resistance (MOhm)

5.4@10V

Typical Gate Charge @ Vgs (nC)

109@10V

Typical Gate Charge @ 10V (nC)

109

Typical Input Capacitance @ Vds (pF)

6860@25V

Maximum Power Dissipation (mW)

360000

Typical Fall Time (ns)

19

Typical Rise Time (ns)

11

Typical Turn-Off Delay Time (ns)

25

Typical Turn-On Delay Time (ns)

19

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

9.15(Max)

Package Width

4.83(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-220

Vds - Drain-Source Breakdown Voltage

75 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

360 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

109 nC

Rds On - Drain-Source Resistance

5.4 mOhms

Id - Continuous Drain Current

170 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N