Littelfuse IXTP32P20T

包装/外壳

TO-220-3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TrenchP

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±15

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

32

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

130@10V

Typical Input Capacitance @ Vds (pF)

14500@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

12

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

57

Typical Turn-On Delay Time (ns)

32

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.15(Max)

Package Width

4.83(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-220AB

MSL

-

Qualification

-

Continuous Drain Current Id

32A

Vds - Drain-Source Breakdown Voltage

200 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

300 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 15 V, + 15 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

185 nC

Rds On - Drain-Source Resistance

130 mOhms

Id - Continuous Drain Current

32 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

300W

信道型

P