Littelfuse IXTP50N20P

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

50

Maximum Drain Source Resistance (MOhm)

60@10V

Typical Gate Charge @ Vgs (nC)

70@10V

Typical Gate Charge @ 10V (nC)

70

Typical Input Capacitance @ Vds (pF)

2720@25V

Maximum Power Dissipation (mW)

360000

Typical Fall Time (ns)

30

Typical Rise Time (ns)

35

Typical Turn-Off Delay Time (ns)

70

Typical Turn-On Delay Time (ns)

26

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

9.15(Max)

Package Width

4.83(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-220

Continuous Drain Current

50(A)

Drain-Source On-Volt

200(V)

Operating Temperature Classification

Military

Package Type

TO-220

Operating Temp Range

-55C to 175C

Gate-Source Voltage (Max)

±20(V)

Number of Elements

1

Rad Hardened

无

零件状态

活跃

类型

功率MOSFET

引脚数量

3

极性

N

配置

Single

功率耗散

360(W)

信道型

N